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leads to different Poisson potentials, and hence subsequent iterations do yield different energy levels. Although just one iterative step is sufficient to yield a result to within 1 meV of the self-consistent solution, the calculations with the same step length (Sz=l A) as before, diverge as the iteration proceeds. This is a manifestation of the computational implementation the smallest asymmetry in the potential profile is exaggerated with each iterative loop. Fig. 3.38 also illustrates the solution, which is merely to increase the computational accuracy by way of reducing the step length 6z in the original discretization of the potential. Asymmetric potentials, such as step quantum wells, or quantum wells with electric fields applied, are naturally more resistant to such effects. 3.20 MODULATION DOPING Although mention has been made of quantum well systems in which doping in the barriers leads to a spatial separations of the ions and charge carriers, i.e. which collect in a quantum well, quantitative calculations presented thus far have not considered these modulation-doped systems. Fig. 3.39 shows the band-edge potential, VCB, and the self-consistent potential, VCB + Vp, for a system of the type illustrated in Fig. 3.30, i.e. an undoped single quantum well surrounded by doped barriers; with the full layer definition thus being: 100 A Gao.8Alo.2As doped n-type to 2xl0 17 cm 3 ; 100 A GaAs undoped; 100 A Gao.8Alo.2As doped n-type to 2x 1017cm 3.

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n^(x)=QiSx&U - ~BX 0 < p.$(x) < 1 iff x e BNB(X)

The guarded command language was introduced by Dijkstra (1975). Exercises 10.11 and 10.21 are based on the so-called 'SX' method for computing powers described by Knuth (1969, pp. 398-422). Exercise 13.15 in 13 completes the discussion of this method. A recommended text on concurrent programming that practises a correctby-construction methodology is A Method of Multiprogramming by Feijen and van Gasteren (1996).

Figure 3.39 The band-edge potential and the self-consistent potential of a modulation-doped single quantum well

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Before moving on to add iteration to the control structures in our simple programming language, it is convenient to first extend the specification language to allow so-called quantifiers. Quantifiers allow one to denote the operation of applying some binary operator (like addition or multiplication, conjunction or disjunction) to an arbitrary, possibly infinite, bag1 of values. In this chapter, we introduce a uniform notation for quantifiers. We compare the notation with existing notations, pointing out its advantages and disadvantages. We also give rules for manipulating quantifiers and illustrate their use with several examples. Two quantifiers that are particularly important are universal quantification and existential quantification. Additional rules governing such quantifications are also presented.

The electrons introduced into the system are physically separated from the ionised donors, so therefore instead of an ion/charge carrier plasma, the mobile charge in this

Union: p,gUY(x) > max{/z^(x),/ig(a;)} for any x U Intersection: fj,^r]Y(x) < mm{p,g(x)^pY3(x)} for any x G U

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Most readers will have encountered the dotdotdot notation already. It is a notation that is rarely introduced properly; mostly, it is just used without explanation as in, for example, '1 + 2+ ... +20 = 210' and 'let XQ,XI, ... ,x n be'. The dotdotdot notation is used when some operation is to be applied to a bag of values in cases where the bag is too large to be enumerated, or the size of the bag is given by some variable. In the case of '1 + 2 + ... + 20 = 210', the operation is addition and there are 20 values to be enumerated; in the case of 'let XQ,XI, ... ,xn be', the operation is sequencing (indicated by a comma) and the number of values is given by the variable n.

case is often referred to as a two-dimensional electron gas. The physical separation leads to a reduction in the ionised impurity scattering and hence increased electron mobilities for in-plane (x-y) transport, a feature which is exploited in High-ElectronMobility Transistors (HEMTs). 3.21 THE HIGH-ELECTRON-MOBILITY TRANSISTOR The high-electron-mobility transistor (HEMT), the heterostructure field-effect transistor (HFET), the modulated-doped field-effect transistor (MODFET), or even the two-dimensional electron-gas field-effect transistor (TEGFET), are all names which refer to a transistor designed to exploit the high in-plane (x-y) mobility which arises when a (usually single) heterojunction is modulation-doped. In essence, a highbandgap material such as Ga 1 _ x Al x As is doped n-type, and upon ionisation of the donors the electrons move to the lower energy levels available in the narrower-bandgap material, such as GaAs this situation is very similar to the single quantum well of the previous section, but with just one barrier layer in this case.

1 A bag is a set in which elements may occur more than once (and the number of occurrences is significant).

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